http://www.itocp.com/bbs/thread-141959-1-1.html ?存芯片采用了英特?的29F64G08ACME2 25nm同步ccMLC NAND?粒, ??容量8GB，5000次完全?入/擦除周期，相?于3000次?入/擦除周期的?步?粒??，???粒无?是性能?是可?性都要更上一??，同?也才能配得上HyperX的??。
Intel's flash memory chip 29F64G08ACME2 25nm synchronous ccMLC NAND particles, single capacity of 8GB, 5000 times completely write / erase cycles, compared to 3000 particles asynchronous write / erase cycles, this particle both performance have a higher level of reliability, but also can be worthy of the title of HyperX
?存芯片采用了英特?的29F64G08ACME2 25nm同步ccMLC NAND?粒, ??容量8GB，5000次完全?入/擦除周期，相?于3000次?入/擦除周期的?步?粒??，???粒无?是性能?是可?性都要更上一??，同?也才能配得上HyperX的??。
Intel's flash memory chip 29F64G08ACME2 25nm synchronous ccMLC NAND particles, single capacity of 8GB, 5000 times completely write / erase cycles, compared to 3000 particles asynchronous write / erase cycles, this particle both performance have a higher level of reliability, but also can be worthy of the title of HyperX